2SD1440 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SILICON NPN TRIPLE DIFFUSED JUNCTION MESA TYPE HORIZONTAL DEFLECTION OUTPUT

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1440
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
3.5
A
I_CP
Collector Current-Peak
13
A
I_BP
Base Current-Peak
Collector Power Dissipation
@ T_a= 25℃
P_C
Collector Power Dissipation
@ T_C= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3.5
A
2.5
W
65
130
℃
-55~130
℃
isc Website：www.iscsemi.cn