2SD1437 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1437
DESCRIPTION
·Collector-Emitter Breakdown Voltage
:V_(BR)CEO= 60V(Min)
·Complement to Type 2SB1033
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
80
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
60
V
5
V
3
A
40
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn