2SD1430 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1430
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (T_a=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_E
Emitter current
P_D
Total power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
1500
600
5
3.5
-3.5
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃