2SD1429 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA TYPE

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1429
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
2.5
A
IE
Emitter Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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