2SD1428 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1428
DESCRIPTION
·With TO-3P(H)1S package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
1500
600
5
6
-6
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃