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| 2SD1416 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1416
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V
·Complement to Type 2SB1021
APPLICATIONS
·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
30
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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