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| 2SD1412 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1412
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
·Complement to Type 2SB1019
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
2
W
30
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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