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| 2SD1410 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1410
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
2.0
W
30
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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