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| 2SD1408 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1408
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max)@ IC= 3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Complement to Type 2SB1017
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.4
A
25
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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