2SD1406 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1406
DESCRIPTION
·With TO-220Fa package
·Collector power dissipation
:P_C=25W@T_C=25℃
·Low collector saturation voltage
·Complement to type 2SB1015
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector -emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
60
60
7
3
0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃