2SD1390 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1390
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Reliability
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
1
A
I_CP
Collector Current-Pulse
Collector Power Dissipation
P_C
@ T_C≤90℃
T_J
Junction Temperature
2.5
A
40
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn