2SD1380 Datasheet, PDF (1/3 Pages) Rohm – 2SD1380

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1380
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB1009
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
40
32
5
2
10
150
-55~150
UNIT
V
V
V
A
W
℃
℃