2SD1374 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1374
DESCRIPTION
·High Collector-Base Voltage-
: VCBO= 300V(Min.)
·Good Linearity of hFE
·High Speed Switching
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage,high-speed,power switching
regulators and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
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