2SD1362 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1362
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Collector Power Dissipation-
: PC= 40W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 4A
·Complement to Type 2SB992
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Ta=25℃
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
1.5
W
40
150
℃
-55~150 ℃
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