2SD1355 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1355
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 4A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
·Complement to Type 2SB995
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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