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| 2SD1352 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1352
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80(Min)
·Good Linearity of hFE
·Complement to Type 2SB989
APPLICATIONS
·Designed for general purpose application
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IE
Emitter Current-Continuous
-4
A
IBB
Base Current-Continuous
0.4
A
PC
Collector Power Dissipation@ TC=25â
30
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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