2SD1345 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1345
DESCRIPTION
·High Switching Time
·Low Collector Saturation Voltage
: V_CE(sat)= 0.4V(Max)@I_C= 4A
·Wide Area of Safe Operation
·Complement to Type 2SB983
APPLICATIONS
·Inverters, converters
·Controllers for DC motor, pulse motor
·Switching power supplies
·General power applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
60
V
V_CEO Collector-Emitter Voltage
50
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
12
A
I_BB
Base Current-Continuous
1.5
A
I_BM
Base Current-Peak
Total Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
40
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
3.1
UNIT
℃/W
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