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| 2SD1336 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1336
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain
: hFE= 1500(Min) @ IC= 5A, VCE= 4V
·High Speed Switching
APPLICATIONS
·High power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
2
W
35
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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