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| 2SD1314 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1313
DESCRIPTION
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
·High Speed Switching
·Low Collector Saturation Voltage
APPLICATIONS
·High power amplifier applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Pulse
35
A
IB
Base Current-Continuous
10
A
IBM
Base Current- Pulse us
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
200
W
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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