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| 2SD1311 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRIPLE DIFFUSED TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1311
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 3A
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.6
A
1.3
W
40
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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