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| 2SD1309 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1309
DESCRIPTION
·High DC Current Gain
:hFE= 2000(Min) @ IC= 3A
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min)
·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 3A
APPLICATIONS
·Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
8
A
ICM
Collector Current-peak
12
A
IBB
Base Current
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.8
A
40
W
1.5
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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