2SD1301 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SI NPN TRIPLE DIFFUSED MESA

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1301
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max.)@ IC= 1A
·Wide area of safe operation
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VEBO
IC
Emitter-Base Voltage
Collector Current- Continuous
5
V
2
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC= 25℃
TJ
Junction Temperature
8
A
45
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}