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2SD1300 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1300
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·Low Collector Saturation Voltage-
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
1500
V
600
V
5
V
3.0
A
3.0
A
50
W
150
â
Tstg
Storage Temperature Range
-65~150 â
isc websiteï¼www.iscsemi.com1
isc & iscsemi is registered trademark
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