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| 2SD1298 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Low Collector Saturation Voltage | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1298
DESCRIPTION
·High DC Current Gain
: hFE= 200(Min.)@ IC= 6A, VCE= 2V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 400V(Min)
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
400
V
8
V
10
A
20
A
100
W
3.0
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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