2SD1288 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON EPITAXIAL/NPN TRIPLE DIFFUSED TRANSISTOR

isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Typ)@IC= 4.0A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Complement to Type 2SB965
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
7
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
10
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
2SD1288
isc website：www.iscsemi.com
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