2SD1279 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1279
DESCRIPTION
With TO-3 package
High voltage;high speed
Low collector saturation voltage
APPLICATIONS
Color TV horizontal deflection output
applications
Switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1400
600
5
10
5
50
150
-65~150
UNIT
V
V
V
A
A
W