2SD1266A Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1266 2SD1266A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio h_FE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB941/941A
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD1266
2SD1266A
Open emitter
V_CEO
Collector-emitter voltage
2SD1266
2SD1266A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_a=25℃
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
60
80
6
3
5
2
35
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃