|
2SD1266 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification) | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1266
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.2V(Max)@ IC= 3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·Good Linearity of hFE
·Complement to Type 2SB941
APPLICATIONS
·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
35
W
2
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |