2SD1263 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1263 2SD1263A
DESCRIPTION
·With TO-220Fa package
·High breakdown voltalge
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD1263
2SD1263A
Open emitter
V_CEO
Collector-emitter voltage
2SD1263
2SD1263A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_a=25℃
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
350
400
250
300
5
0.75
1.5
2
35
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃