2SD1255 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1255
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 130V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 3.0A
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
130
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
8
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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