2SD1245 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1245
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High DC Current Gain
: hFE= 500(Min) @IC= 2A
APPLICATIONS
·Designed for general purpose amplifier and Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
400
V
5
V
6
A
10
A
40
W
150
℃
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}