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2SD1237 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD1237
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
·Large Current Capacity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers, high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
120
V
120
V
6
V
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
7
A
12
A
1.75
W
40
150
â
Tstg
Storage Temperature Range
-55~150
â
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