2SD1236L Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1236L
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB920L
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Relay drivers,high speed inverters,
converters,and other general
high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
90
80
6
5
9
30
1.75
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃