2SD1236 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD1236
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 3A
·Large Current Capacity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers, high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
120
V
120
V
6
V
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5
A
8
A
1.75
W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}