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| 2SD1230 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1230
DESCRIPTION
·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Complement to Type 2SB913
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
110
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
12
A
2.5
W
60
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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