2SD1229 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1229
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB912
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
MAX
70
60
6
10
15
60
2.5
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃