2SD1163 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1163,2SD1163A
DESCRIPTION
With TO-220 package
Low collector saturation voltage
APPLICATIONS
TV horizontal deflection output,
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD1163
2SD1163A
Open emitter
V_CEO
Collector-emitter voltage
2SD1163
2SD1163A
Open base
V_EBO
I_C
Emitter-base voltage
Collector current
Open collector
I_CM
Collector current-peak
I_C(surge)
Collector current-surge
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
T_C=25
VALUE
300
350
120
150
6
7
10
20
40
150
-55~150
UNIT
V
V
V
A
A
A
W