2SD1127 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – SILICON NPN TRIPLE DIFFUSED POWER SWITCHING

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1127
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 120V(Min)
·High DC Current Gain
: h_FE= 1000(Min) @I_C= 10A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
120
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
10
A
I_CP
Collector Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
15
A
50
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn