2SD1110 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1110
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 120V(Min)
·Good Linearity of h_FE
·Complement to Type 2SB849
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CP
Collector Current-Pulse
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
120
V
5
V
7
A
12
A
80
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn