2SD110 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD110
DESCRIPTION
·High Power Dissipation-
: P_C= 100W@T_C= 25℃
·High Current Capability-
: I_C = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
130
V
V_CEO Collector-Emitter Voltage
110
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
10
A
I_E
Emitter Current-Continuous
-10
A
I_BB
Base Current-Continuous
3
A
P_C
Collector Power Dissipation @T_C=25℃ 100
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
isc Website：www.iscsemi.cn