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| 2SD1026 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(15A NPN) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1026
DESCRIPTION
·High DC Current Gain
: hFE= 1500(Min.)@ IC= 10A, VCE= 3V
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
APPLICATIONS
·Designed for general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
22
A
IBB
Base Current- Continuous
1
A
IBM
Base Current- Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 â/W
isc Websiteï¼www.iscsemi.cn
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