2SC6099 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6099
DESCRIPTION
·Large current capacitance
·High-speed switching
·High allowable power dissipation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·DC-DC converter,relay drivers,lamp drivers,motor drivers,
inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
3
A
15
W
0.8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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