2SC6011A Datasheet, PDF (1/2 Pages) Allegro MicroSystems – Audio Amplification Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6011/A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)-2SC6011
= 200V(Min)-2SC6011A
·Good Linearity of hFE
·Complement to Type 2SA2151/A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
2SC6011
200
VCBO
Collector-Base
Voltage
V
2SC6011A
230
2SC6011
200
VCEO
Collector-Emitter
Voltage
V
2SC6011A
230
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
160
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
1
isc & iscsemi is registered trademark