 English |
|
|
|
|
|
|
|
| 2SC5763 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SC5763
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Total Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
400
V
8
V
7
A
14
A
1.75
W
55
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese