2SC5584 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

isc Silicon NPN Power Transistor
isc Product Specification
2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
30
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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