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| 2SC5517 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5517
DESCRIPTION
·High Breakdown Voltage-
ï¼VCBO= 1700V (Min)
·High Switching Speed
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCES
Collector-Emitter Voltage
1700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
6
A
ICM
Collector Current- Peak
12
A
IBB
Base Current- Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
3
W
40
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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