2SC5480 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused Horizntal Deflection Output

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5480
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output stage
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage
1500
V
V_EBO
Emitter-Base Voltage
I_C(peak) Collector Current-Peak
I_C(surge) Collector Current-Surge
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
V
14
A
28
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn