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| 2SC5463 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5463
DESCRIPTION
·Low Noise Figure
NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz
·High Gain
︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz
APPLICATIONS
·Designed for use in VHF~ UHF band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
60
mA
0.1
W
125
â
-55~125
â
isc websiteï¼www.iscsemi.cn
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