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| 2SC5353 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5353
DESCRIPTION
·CollectorâEmitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) =1V(Max) @ IC= 1.2A
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Emitter Voltage
900
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak tp<5ms
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
1
A
25
W
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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