2SC5352 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5352
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulator and high voltage switching
applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
600
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base voltage
7
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
80
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn